Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure
نویسندگان
چکیده
منابع مشابه
Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure.
Low-temperature photoluminescence (PL) spectra of electron-hole systems in Si nanowires (NWs) prepared by thermal oxidization of Si fin structures were studied. Mapping of PL reveals that NWs with uniform width are formed over a large area. Annealing temperature dependence of PL peak intensities was maximized at 400 °C for each NW type, which are consistent with previous reports. Our results co...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2014
ISSN: 1094-4087
DOI: 10.1364/oe.22.001997